| PART |
Description |
Maker |
| S1151010 S11510-1106 S11510-1006 |
Enhanced near infrared sensitivity: QE=40% (位=1000 nm)
Enhanced near infrared sensitivity: QE=40% (λ=1000 nm)
|
Hamamatsu Corporation
|
| ISL29038 ISL29038IROZ-EVALZ |
Low Power Ambient Light and Proximity Sensor with Enhanced Infrared Rejection
|
Intersil Corporation
|
| 1N6266 |
GAAS INFRARED EMITTING DIODE 1 ELEMENT, INFRARED LED, 940 nm
|
QT[QT Optoelectronics]
|
| CQX15 |
GaAs INFRARED EMITTING DIODE 4.67 mm, 1 ELEMENT, INFRARED LED, 940 nm
|
Fairchild Semiconductor, Corp.
|
| LED55BF LED55CF LED56F |
GAAS INFRARED EMITTIN DIODE 4.67 mm, 1 ELEMENT, INFRARED LED, 940 nm
|
QT[QT Optoelectronics]
|
| SE1470 SE1470-003L |
1.57 mm, 1 ELEMENT, INFRARED LED, 880 nm
AlGaAs Infrared Emitting Diode
|
Honeywell Accelerometers
|
| TLN110 |
INFRARED LED GAAS INFRARED EMITTER
|
TOSHIBA[Toshiba Semiconductor]
|
| TLN11007 TLN110F |
INFRARED LED GAAS INFRARED EMITTER
|
Toshiba Semiconductor
|
| PMV45EN PMV45EN-01 |
uTrenchMOS tm enhanced logic level FET
N-channel TrenchMOS logic level FET
mTrenchMOS enhanced logic level FET
From old datasheet system
mTrenchMOSTM enhanced logic level FET
|
NXP Semiconductors N.V.
Philips
|
| PIC18FXXXX PIC18LF8722-E_PT PIC18F6627 PIC18F6722 |
(PIC18Fxx2x) Enhanced Flash Microcontrollers
64/80-PIN 1-MBIT ENHANCED FLASH MICROCONTROLLERS WITH 10-BIT A/D AND NANOWATT TECHNOLOGY
|
MICROCHIP[Microchip Technology]
|
| LATBT66B-ST-1 LATBT66B |
Enhanced optical Power LED (HOP2000 / ATON?)
Enhanced optical Power LED (HOP2000 / ATON㈢)
Enhanced optical Power LED (HOP2000 / ATON??
Hyper Multi TOPLED? amber/ true gree...
|
N.A.
OSRAM GmbH
Infineon
|
| MIE-524H4 524H4 |
GaAlAs HIGH POWER T-1 3/4 PACKAGE INFRARED EMITTING DIODE 大功率的GaAIAs的T 1 3 / 4包装红外发光二极
Infrared Emitting Diodes (IRED)
|
Unity Opto Technology Co., Ltd.
UOT[Unity Opto Technology]
|
